Laboratory of Physics of Interfaces and Thin Films

The realization of Thin Film Transistors with an electron mobility higher than the one of TFT's on amorphous silicon and with a stable threshold voltage have a lot of interest in the field of Large Area Electronics. The interest was initially manifested for the use of the same material for the addressing ciruits of AMLCD Displays. More recently it has also been shown that this device would be also very important for the realization of command electronics of OLED displays.

Transfer Characteristic of a microcrystalline silicon TFT, with a mobility of 2!	Comparison of the stability of the current of the TFT of amorphous and microcrystalline silicon, as a funciton of time under accelerated stress conditions. Only the TFT made on microcrysalline silicon are stable.

Bottom gate TFT made in collaboration with Unaxis	Top Gate made in collaboration with Philips

Latest results : Thesis Defense of Samir Kasouit last October 2003    

Contact : Yvan Bonnassieux